FGB5N60UNDF

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Manufacturer part number:FGB5N60UNDF

Manufacturer:ON Semiconductor

Description:FGB5N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGB5N60UNDF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	73.5W
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	73.5W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	10A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	7.5 ns
Test Condition	400V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 5A
Turn Off Time-Nom (toff)	151.6 ns
IGBT Type	NPT
Gate Charge	12.1nC
Current - Collector Pulsed (Icm)	15A
Td (on/off) @ 25°C	5.4ns/25.4ns
Switching Energy	80μJ (on), 70μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8.5V
Fall Time-Max (tf)	202ns
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free