FGH40T65UQDF-F155 Description

The new line of field stop 4th generation IGBTs from ON Semiconductor use revolutionary field stop IGBT technology to provide enhanced conduction and switching performance as well as simple parallel operation. This device is ideal for applications requiring resonant or gentle switching, such MWO and induction heating.

FGH40T65UQDF-F155 Features

• Max Junction Temperature 175°C

• Positive Temperature Co?efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A

• 100% of the Parts Tested for ILM

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb?Free and is RoHS Compliant

FGH40T65UQDF-F155 Applications

• Induction Heating

• MWO