FGH50T65SQD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH50T65SQD-F155 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.39g
Operating Temperature
-55°C~175°C TJ
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
268W
Reverse Recovery Time
31ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
100A
Test Condition
400V, 12.5A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
IGBT Type
Trench Field Stop
Gate Charge
99nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
22ns/105ns
Switching Energy
180μJ (on), 45μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.427760
$11.42776
10
$10.780906
$107.80906
100
$10.170666
$1017.0666
500
$9.594968
$4797.484
1000
$9.051856
$9051.856
FGH50T65SQD-F155 Product Details
FGH50T65SQD-F155 Description
FGH50T65SQD-F155 is a type of field stop trench IGBT specifically designed based on novel field stop IGBT technology. It belongs to the new series of field stop 4th generation IGBTs provided by ON Semiconductor. An easy parallel operation can be ensured due to its positive temperature coefficient. It supports high current capability, high input impedance, tighten parameter distribution, and fast switching. These characteristics make FGH50T65SQD-F155 IGBT well suited for applications requiring low conduction and switching losses.