Description

The STGF19NC60HD is a very fast IGBT with an ultrafast diode that operates at 19 A and 600 V. The device is a high-speed IGBT. It makes use of the sophisticated Power MESH^TM technology, which provides an outstanding balance of switching performance and minimal on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Features

? High-current

? Low-saturation-voltage capability of bipolar transistors

? High current-handling capabilities

? Low on-voltage drop (VCE(sat))

? Very soft ultrafast recovery anti-parallel diode

Applications

? High-frequency motor drives

? SMPS and PFC in both hard switch and resonant topologies

? Power transistor

? Switched-mode power supplies

? Traction motor control

? Induction heating