NGB8202NT4G

new-10%

Manufacturer part number:NGB8202NT4G

Manufacturer:ON Semiconductor

Description:NGB8202NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGB8202NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	400V
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NGB8202
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	8000ns
Element Configuration	Single
Power Dissipation	150W
Case Connection	COLLECTOR
Input Type	Logic
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	440V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	440V
Max Breakdown Voltage	440V
Turn On Time	6500 ns
Test Condition	300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)	18500 ns
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	-/5μs
Gate-Emitter Voltage-Max	15V
Gate-Emitter Thr Voltage-Max	2.1V
Fall Time-Max (tf)	14000ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free