STGWT20IH125DF                          Description

These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.

STGWT20IH125DF                        Features

? Designed for soft commutation only

? Maximum junction temperature: TJ = 175 °C

? Minimized tail current

? VCE(sat) = 2.0 V (typ.) @ IC = 15 A

? Tight parameters distribution

? Safe paralleling

? Very low VF soft recovery co-packaged diode

? Low thermal resistance

? Lead free package

STGWT20IH125DF                        Applications

? Induction heating

? Microwave oven

? Resonant converters