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FGP3040G2-F085

FGP3040G2-F085

FGP3040G2-F085

ON Semiconductor

FGP3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGP3040G2-F085 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Rise Time-Max 7000ns
Input Type Logic
Power - Max 150W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 41A
Power Dissipation-Max (Abs) 150W
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A
Gate Charge 21nC
Td (on/off) @ 25°C 900ns/4.8μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.17000 $2.17
10 $1.94600 $19.46
400 $1.46875 $587.5
800 $1.28515 $1028.12
1,200 $1.06483 $1.06483
FGP3040G2-F085 Product Details

FGP3040G2-F085 Description

 

FGP3040G2-F085 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGP3040G2-F085 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FGP3040G2-F085 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FGP3040G2-F085 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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