FJD3076TM Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 130 @ 500mA 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

FJD3076TM Features

the DC current gain for this device is 130 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

FJD3076TM Applications

There are a lot of ON Semiconductor FJD3076TM applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver