FJD3076TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJD3076TM Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
1W
Terminal Form
GULL WING
Current Rating
2A
Frequency
100MHz
Base Part Number
FJD3076
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
130 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
800mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
130
Height
2.3mm
Length
6.6mm
Width
6.1mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.25962
$0.51924
5,000
$0.24271
$1.21355
12,500
$0.23989
$2.87868
FJD3076TM Product Details
FJD3076TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 130 @ 500mA 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
FJD3076TM Features
the DC current gain for this device is 130 @ 500mA 3V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 100MHz
FJD3076TM Applications
There are a lot of ON Semiconductor FJD3076TM applications of single BJT transistors.