MMBT5551

new-10%

Manufacturer part number:MMBT5551

Manufacturer:ON Semiconductor

Description:MMBT5551 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBT5551 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	31 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3
Weight	30mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	160V
Max Power Dissipation	350mW
Current Rating	600mA
Frequency	300MHz
Base Part Number	MMBT5551
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	350mW
Power - Max	350mW
Gain Bandwidth Product	100MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	160V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	160V
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Max Frequency	300MHz
Collector Emitter Saturation Voltage	200mV
Max Breakdown Voltage	160V
Frequency - Transition	100MHz
Collector Base Voltage (VCBO)	180V
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Max Junction Temperature (Tj)	150°C
Height	1.2mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free