MMBT5551 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT5551 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
31 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
160V
Max Power Dissipation
350mW
Current Rating
600mA
Frequency
300MHz
Base Part Number
MMBT5551
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Max Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Max Junction Temperature (Tj)
150°C
Height
1.2mm
Length
2.92mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
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Unit Price
Ext. Price
MMBT5551 Product Details
MMBT5551 Description
The MMBT5551 is a NPN Bipolar Transistor designed for general-purpose high-voltage amplifiers and gas discharge display drivers. The MMBT5551 operates within ambient temperatures from -55 to 150°C and with Collector- Emitter Voltage 160V, Collector- Base Voltage 180V, and Emitter- Base Voltage 6V. What's more, the power dissipation is 350mW. SOT-23-3 is its package.
MMBT5551 Features
-55 to 150°C Operating junction temperature range This Devices is Pb?Free, Halogen Free/BFR Free and is RoHS Compliant In SOT-23 package Power Dissipation: 350 mW NPN Transistor Polarity
MMBT5551 Applications
Power Management Multimedia Industrial general?purpose high?voltage amplifiers gas discharge display drivers
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