2SB1122S-TD-E Overview

DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -180mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 50V volts can be used.The maximum collector current is 1A volts.

2SB1122S-TD-E Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

2SB1122S-TD-E Applications

There are a lot of ON Semiconductor 2SB1122S-TD-E applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting