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FJP3307DH2TU

FJP3307DH2TU

FJP3307DH2TU

ON Semiconductor

FJP3307DH2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP3307DH2TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation 80W
Current Rating 8A
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 26 @ 2A 5V
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 26
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.523303 $0.523303
10 $0.493683 $4.93683
100 $0.465738 $46.5738
500 $0.439376 $219.688
1000 $0.414505 $414.505
FJP3307DH2TU Product Details

FJP3307DH2TU Overview


This device has a DC current gain of 26 @ 2A 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.The maximum collector current is 8A volts.

FJP3307DH2TU Features


the DC current gain for this device is 26 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A

FJP3307DH2TU Applications


There are a lot of ON Semiconductor FJP3307DH2TU applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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