FJP3307DH2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP3307DH2TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
400V
Max Power Dissipation
80W
Current Rating
8A
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
26 @ 2A 5V
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
26
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.523303
$0.523303
10
$0.493683
$4.93683
100
$0.465738
$46.5738
500
$0.439376
$219.688
1000
$0.414505
$414.505
FJP3307DH2TU Product Details
FJP3307DH2TU Overview
This device has a DC current gain of 26 @ 2A 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.The maximum collector current is 8A volts.
FJP3307DH2TU Features
the DC current gain for this device is 26 @ 2A 5V the vce saturation(Max) is 3V @ 2A, 8A the emitter base voltage is kept at 9V the current rating of this device is 8A
FJP3307DH2TU Applications
There are a lot of ON Semiconductor FJP3307DH2TU applications of single BJT transistors.