JANTX2N3700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3700 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/391
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.079000
$4.079
10
$3.848113
$38.48113
100
$3.630295
$363.0295
500
$3.424807
$1712.4035
1000
$3.230950
$3230.95
JANTX2N3700 Product Details
JANTX2N3700 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 7V for high efficiency.Parts of this part have transition frequencies of 100MHz.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 7V a transition frequency of 100MHz
JANTX2N3700 Applications
There are a lot of Microsemi Corporation JANTX2N3700 applications of single BJT transistors.