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PN2222ATFR

PN2222ATFR

PN2222ATFR

ON Semiconductor

PN2222ATFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN2222ATFR Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 500mA
Frequency 300MHz
Base Part Number PN2222
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Turn Off Time-Max (toff) 285ns
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950
PN2222ATFR Product Details

PN2222ATFR Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 1A volts.

PN2222ATFR Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz

PN2222ATFR Applications


There are a lot of ON Semiconductor PN2222ATFR applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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