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FQD1P50TM

FQD1P50TM

FQD1P50TM

ON Semiconductor

MOSFET P-CH 500V 1.2A DPAK

SOT-23

FQD1P50TM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 38W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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