FSB649 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.As a result, the part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 25V volts.In extreme cases, the collector current can be as low as 3A volts.
FSB649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
FSB649 Applications
There are a lot of ON Semiconductor FSB649 applications of single BJT transistors.
- Muting
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- Interface
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- Driver
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- Inverter
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