FZT749 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.100MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 25V volts.A maximum collector current of 3A volts can be achieved.
FZT749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
FZT749 Applications
There are a lot of ON Semiconductor FZT749 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
