STGWA30N120KD

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Manufacturer part number:STGWA30N120KD

Manufacturer:STMicroelectronics

Description:STGWA30N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWA30N120KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~125°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	220W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGWA30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	220W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.85V
Max Collector Current	60A
Reverse Recovery Time	84 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	57 ns
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.85V @ 15V, 20A
Turn Off Time-Nom (toff)	756 ns
Gate Charge	105nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	36ns/251ns
Switching Energy	2.4mJ (on), 4.3mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant