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STGWA30N120KD

STGWA30N120KD

STGWA30N120KD

STMicroelectronics

STGWA30N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWA30N120KD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~125°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation220W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWA30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 220W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.85V
Max Collector Current 60A
Reverse Recovery Time 84 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time57 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.85V @ 15V, 20A
Turn Off Time-Nom (toff) 756 ns
Gate Charge105nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 36ns/251ns
Switching Energy 2.4mJ (on), 4.3mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusROHS3 Compliant
In-Stock:1709 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.440152$14.440152
10$13.622784$136.22784
100$12.851684$1285.1684
500$12.124230$6062.115
1000$11.437953$11437.953

STGWA30N120KD Product Details

STGWA30N120KD Description


STGWA30N120KD is a member of IGBTs co-packaged with an Ultrafast free-wheeling diode. It is designed based on an advanced proprietary trench gate and field stop structure. It is able to deliver an excellent trade-off between switching performance and low on-state behavior. The STGWA30N120KD IGBT is supplied in the TO-247 package to save board space.



STGWA30N120KD Features


Supplied in the TO-247 package

Low on-losses

High current capability

Low gate charge

Short circuit withstand time 10 μs



STGWA30N120KD Applications


Motor control


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