FGL60N100BNTD

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Manufacturer part number:FGL60N100BNTD

Manufacturer:ON Semiconductor

Description:FGL60N100BNTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGL60N100BNTD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
HTS Code	8541.29.00.95
Voltage - Rated DC	1kV
Max Power Dissipation	180W
Current Rating	60A
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	180W
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	320ns
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	60A
Reverse Recovery Time	1.2 μs
Collector Emitter Breakdown Voltage	600V
Voltage - Collector Emitter Breakdown (Max)	1000V
Collector Emitter Saturation Voltage	1.5V
Max Breakdown Voltage	1kV
Turn On Time	460 ns
Test Condition	600V, 60A, 51 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Turn Off Time-Nom (toff)	760 ns
IGBT Type	NPT and Trench
Gate Charge	275nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	140ns/630ns
Height	26mm
Length	20mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free