STGW8M120DF3  Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.

STGW8M120DF3  Features

10 μs of short-circuit withstand time

VCE(sat) = 1.85 V (typ.) @ IC = 8 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

STGW8M120DF3  Applications

Industrial drives

UPS

Solar

Welding