STGWA40H120F2 Description

The STGWA40H120F2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The transistor STGWA40H120F2  is a part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VcE(sat) temperature coefficient and very tight parameter distribution result in

safer paralleling operation.

STGWA40H120F2 Features

Maximum junction temperature: Tj= 175 °C

High-speed switching series

Minimized tail current

VcE(sat)= 2.1 V (typ.)@lc=40 A

5 μs minimum short-circuit withstand time at Tj= 150 °C

Safe paralleling

Low thermal resistance

STGWA40H120F2 Applications

Uninterruptible power supply

Welding machines

Photovoltaic inverters

Power factor correction

High-frequency converters