HGTG20N60B3 Description

The HGTG20N60B3 is a high-voltage switching device that combines the greatest qualities of MOSFETs and bipolar transistors in a Generation III MOS gated device. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates relatively modestly. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT.

HGTG20N60B3 Features

• Short Circuit Rated

• Low Conduction Loss

• 40A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time: 140ns at 150°C

HGTG20N60B3 Applications

• Other Industrial

• Power management

• Motor drive & control