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NSVBC850BLT1G

  • NSVBC850BLT1G
  • NSVBC850BLT1G

NSVBC850BLT1G

NSVBC850BLT1G

ON Semiconductor

NSVBC850BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBC850BLT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.326976 $0.326976
10 $0.308468 $3.08468
100 $0.291008 $29.1008
500 $0.274536 $137.268
1000 $0.258996 $258.996
NSVBC850BLT1G Product Details

NSVBC850BLT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 100mA volts is possible.

NSVBC850BLT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

NSVBC850BLT1G Applications


There are a lot of ON Semiconductor NSVBC850BLT1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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