NSVBC850BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 100mA volts is possible.
NSVBC850BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
NSVBC850BLT1G Applications
There are a lot of ON Semiconductor NSVBC850BLT1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
