2SD1834T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500μA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.150MHz is present in the transition frequency.The breakdown input voltage is 60V volts.Maximum collector currents can be below 1A volts.
2SD1834T100 Features
the DC current gain for this device is 2000 @ 500mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 150MHz
2SD1834T100 Applications
There are a lot of ROHM Semiconductor 2SD1834T100 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
