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2DA1774Q-7-F

2DA1774Q-7-F

2DA1774Q-7-F

Diodes Incorporated

2DA1774Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DA1774Q-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2DA1774Q-7-F
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DA1774
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Height 750μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.063861 $7.063861
10 $6.664020 $66.6402
100 $6.286811 $628.6811
500 $5.930954 $2965.477
1000 $5.595239 $5595.239
2DA1774Q-7-F Product Details

2DA1774Q-7-F Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.In extreme cases, the collector current can be as low as 150mA volts.

2DA1774Q-7-F Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz

2DA1774Q-7-F Applications


There are a lot of Diodes Incorporated 2DA1774Q-7-F applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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