DP0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Continuous collector voltages should be kept at -100mA to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 80MHz.Input voltage breakdown is available at 50V volts.The maximum collector current is 100mA volts.
DP0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
DP0150BLP4-7B Applications
There are a lot of Diodes Incorporated DP0150BLP4-7B applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
