2SAR502EBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR502EBTL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Weight
29.993795mg
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
150mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Power - Max
150mW
Gain Bandwidth Product
520MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
200nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-150mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.312000
$0.312
10
$0.294340
$2.9434
100
$0.277679
$27.7679
500
$0.261961
$130.9805
1000
$0.247133
$247.133
2SAR502EBTL Product Details
2SAR502EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Breakdown input voltage is 30V volts.The maximum collector current is 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -150mV the vce saturation(Max) is 400mV @ 10mA, 200mA the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor 2SAR502EBTL applications of single BJT transistors.