2SAR502EBTL Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Breakdown input voltage is 30V volts.The maximum collector current is 500mA volts.

2SAR502EBTL Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V

2SAR502EBTL Applications

There are a lot of ROHM Semiconductor 2SAR502EBTL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting