MCH3245-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MCH3245-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Pin Count
3
Power - Max
800mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
420MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.646079
$0.646079
10
$0.609508
$6.09508
100
$0.575007
$57.5007
500
$0.542460
$271.23
1000
$0.511755
$511.755
MCH3245-TL-E Product Details
MCH3245-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 6V can achieve high levels of efficiency.In extreme cases, the collector current can be as low as 2A volts.
MCH3245-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 260mV @ 50mA, 1A the emitter base voltage is kept at 6V
MCH3245-TL-E Applications
There are a lot of ON Semiconductor MCH3245-TL-E applications of single BJT transistors.