MPS651RLRMG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS651RLRMG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
2A
Transition Frequency
75MHz
Frequency - Transition
75MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.21000
$0.21
500
$0.2079
$103.95
1000
$0.2058
$205.8
1500
$0.2037
$305.55
2000
$0.2016
$403.2
2500
$0.1995
$498.75
MPS651RLRMG Product Details
MPS651RLRMG Overview
This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In the part, the transition frequency is 75MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
MPS651RLRMG Features
the DC current gain for this device is 75 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A a transition frequency of 75MHz
MPS651RLRMG Applications
There are a lot of Rochester Electronics, LLC MPS651RLRMG applications of single BJT transistors.