MJD210RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD210RLG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
12.5W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
Frequency
65MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD210
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
PNP, NPN
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
65MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
1.8V
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
8V
hFE Min
70
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.612887
$0.612887
10
$0.578196
$5.78196
100
$0.545467
$54.5467
500
$0.514591
$257.2955
1000
$0.485464
$485.464
MJD210RLG Product Details
MJD210RLG Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 65MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 5A volts is possible.
MJD210RLG Features
the DC current gain for this device is 45 @ 2A 1V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at 8V the current rating of this device is -5A a transition frequency of 65MHz
MJD210RLG Applications
There are a lot of ON Semiconductor MJD210RLG applications of single BJT transistors.