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MJD210RLG

MJD210RLG

MJD210RLG

ON Semiconductor

MJD210RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJD210RLG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 12.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Frequency 65MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD210
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP, NPN
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 65MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
hFE Min 70
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.612887 $0.612887
10 $0.578196 $5.78196
100 $0.545467 $54.5467
500 $0.514591 $257.2955
1000 $0.485464 $485.464
MJD210RLG Product Details

MJD210RLG Overview


In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.8V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 65MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 5A volts is possible.

MJD210RLG Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz

MJD210RLG Applications


There are a lot of ON Semiconductor MJD210RLG applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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