ZXTN2018FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN2018FTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
60V
Max Power Dissipation
1.56W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN2018
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Power - Max
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
210mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
45mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
5A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.053840
$1.05384
10
$0.994189
$9.94189
100
$0.937914
$93.7914
500
$0.884824
$442.412
1000
$0.834740
$834.74
ZXTN2018FTA Product Details
ZXTN2018FTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 45mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Parts of this part have transition frequencies of 130MHz.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 5A volts.
ZXTN2018FTA Features
the DC current gain for this device is 100 @ 2A 1V a collector emitter saturation voltage of 45mV the vce saturation(Max) is 210mV @ 300mA, 6A the emitter base voltage is kept at 7V the current rating of this device is 5A a transition frequency of 130MHz
ZXTN2018FTA Applications
There are a lot of Diodes Incorporated ZXTN2018FTA applications of single BJT transistors.