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PBSS4250X,135

PBSS4250X,135

PBSS4250X,135

Nexperia USA Inc.

PBSS4250X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4250X,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBSS4250
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.44000 $0.44
500 $0.4356 $217.8
1000 $0.4312 $431.2
1500 $0.4268 $640.2
2000 $0.4224 $844.8
2500 $0.418 $1045
PBSS4250X,135 Product Details

PBSS4250X,135 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 2A volts.

PBSS4250X,135 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4250X,135 Applications


There are a lot of Nexperia USA Inc. PBSS4250X,135 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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