PBSS4250X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4250X,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBSS4250
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.44000
$0.44
500
$0.4356
$217.8
1000
$0.4312
$431.2
1500
$0.4268
$640.2
2000
$0.4224
$844.8
2500
$0.418
$1045
PBSS4250X,135 Product Details
PBSS4250X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 2A volts.
PBSS4250X,135 Features
the DC current gain for this device is 300 @ 1A 2V the vce saturation(Max) is 320mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS4250X,135 Applications
There are a lot of Nexperia USA Inc. PBSS4250X,135 applications of single BJT transistors.