DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -340mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.In the part, the transition frequency is 125MHz.The breakdown input voltage is 100V volts.Collector current can be as low as 5A volts at its maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated DXT2013P5-13 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
