2N5550TA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 100MHz.An input voltage of 140V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 600mA volts.

2N5550TA Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5550TA Applications

There are a lot of ON Semiconductor 2N5550TA applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting