BCP69,135 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.40MHz is present in the transition frequency.The breakdown input voltage is 20V volts.When collector current reaches its maximum, it can reach 1A volts.

BCP69,135 Features

the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz

BCP69,135 Applications

There are a lot of Nexperia USA Inc. BCP69,135 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter