ZXTP19100CGTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -130mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 295mV @ 200mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.The emitter base voltage can be kept at -7V for high efficiency.Parts of this part have transition frequencies of 142MHz.Input voltage breakdown is available at 100V volts.When collector current reaches its maximum, it can reach 2A volts.

ZXTP19100CGTA Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz

ZXTP19100CGTA Applications

There are a lot of Diodes Incorporated ZXTP19100CGTA applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting