MJE181G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 600mA, 3A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE181G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE181G Applications
There are a lot of ON Semiconductor MJE181G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
