MJE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJE2955TTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
LIFETIME (Last Updated: 2 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
600mW
Current Rating
-10A
Frequency
2MHz
Base Part Number
MJE2955
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Power - Max
75W
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
-1.1V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-70V
Emitter Base Voltage (VEBO)
-5V
hFE Min
20
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.189621
$2.189621
10
$2.065680
$20.6568
100
$1.948755
$194.8755
500
$1.838448
$919.224
1000
$1.734385
$1734.385
MJE2955TTU Product Details
MJE2955TTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 8V @ 3.3A, 10A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 10A volts.
MJE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of -1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at -5V the current rating of this device is -10A a transition frequency of 2MHz
MJE2955TTU Applications
There are a lot of ON Semiconductor MJE2955TTU applications of single BJT transistors.