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MJE2955TTU

MJE2955TTU

MJE2955TTU

ON Semiconductor

MJE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE2955TTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 600mW
Current Rating -10A
Frequency 2MHz
Base Part Number MJE2955
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Power - Max 75W
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage -1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -70V
Emitter Base Voltage (VEBO) -5V
hFE Min 20
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.189621 $2.189621
10 $2.065680 $20.6568
100 $1.948755 $194.8755
500 $1.838448 $919.224
1000 $1.734385 $1734.385
MJE2955TTU Product Details

MJE2955TTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 8V @ 3.3A, 10A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 10A volts.

MJE2955TTU Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJE2955TTU Applications


There are a lot of ON Semiconductor MJE2955TTU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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