SBC808-25LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.The part has a transition frequency of 100MHz.A maximum collector current of 500mA volts is possible.
SBC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC808-25LT1G Applications
There are a lot of ON Semiconductor SBC808-25LT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
