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SBC808-25LT1G

  • SBC808-25LT1G
  • SBC808-25LT1G

SBC808-25LT1G

SBC808-25LT1G

ON Semiconductor

SBC808-25LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SBC808-25LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Base Part Number BC808
Pin Count 3
Element Configuration Single
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.075668 $0.075668
500 $0.055638 $27.819
1000 $0.046365 $46.365
2000 $0.042537 $85.074
5000 $0.039754 $198.77
10000 $0.036980 $369.8
15000 $0.035765 $536.475
50000 $0.035166 $1758.3
SBC808-25LT1G Product Details

SBC808-25LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.The part has a transition frequency of 100MHz.A maximum collector current of 500mA volts is possible.

SBC808-25LT1G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC808-25LT1G Applications


There are a lot of ON Semiconductor SBC808-25LT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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