BD239ATU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 1A 4V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 200mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As a result, the part has a transition frequency of 3MHz.The maximum collector current is 2A volts.
BD239ATU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD239ATU Applications
There are a lot of ON Semiconductor BD239ATU applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
