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MMSTA64T146

MMSTA64T146

MMSTA64T146

ROHM Semiconductor

MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMSTA64T146 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 1998
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Operating Temperature (Max) 150°C
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 125MHz
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 300mA
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Continuous Collector Current 500mA
Collector-Base Capacitance-Max 7pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.257170 $0.25717
10 $0.242613 $2.42613
100 $0.228880 $22.888
500 $0.215925 $107.9625
1000 $0.203702 $203.702
MMSTA64T146 Product Details

MMSTA64T146 Overview


In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As you can see, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 300mA volts.

MMSTA64T146 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

MMSTA64T146 Applications


There are a lot of ROHM Semiconductor MMSTA64T146 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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