MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
MMSTA64T146 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
1998
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Operating Temperature (Max)
150°C
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
125MHz
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
300mA
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Continuous Collector Current
500mA
Collector-Base Capacitance-Max
7pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.257170
$0.25717
10
$0.242613
$2.42613
100
$0.228880
$22.888
500
$0.215925
$107.9625
1000
$0.203702
$203.702
MMSTA64T146 Product Details
MMSTA64T146 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As you can see, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 300mA volts.
MMSTA64T146 Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the emitter base voltage is kept at 10V a transition frequency of 125MHz
MMSTA64T146 Applications
There are a lot of ROHM Semiconductor MMSTA64T146 applications of single BJT transistors.