2SA2094TLQ Overview

This device has a DC current gain of 120 @ 100mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.300MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SA2094TLQ Features

the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 300MHz

2SA2094TLQ Applications

There are a lot of ROHM Semiconductor 2SA2094TLQ applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting