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2SC4211-6-TL-E

2SC4211-6-TL-E

2SC4211-6-TL-E

ON Semiconductor

2SC4211-6-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC4211-6-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
PackagingTape & Reel (TR)
Published 2015
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation150mW
Polarity NPN
Element ConfigurationSingle
Gain Bandwidth Product200MHz
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Saturation Voltage400mV
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 6V
hFE Min 135
RoHS StatusRoHS Compliant
In-Stock:123790 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.312361$0.312361
10$0.294680$2.9468
100$0.278000$27.8
500$0.262264$131.132
1000$0.247419$247.419

2SC4211-6-TL-E Product Details

2SC4211-6-TL-E Overview


Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.

2SC4211-6-TL-E Features


a collector emitter saturation voltage of 400mV
the emitter base voltage is kept at 6V

2SC4211-6-TL-E Applications


There are a lot of ON Semiconductor 2SC4211-6-TL-E applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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