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2SC4211-6-TL-E

2SC4211-6-TL-E

2SC4211-6-TL-E

ON Semiconductor

2SC4211-6-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC4211-6-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Packaging Tape & Reel (TR)
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Polarity NPN
Element Configuration Single
Gain Bandwidth Product 200MHz
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 6V
hFE Min 135
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.312361 $0.312361
10 $0.294680 $2.9468
100 $0.278000 $27.8
500 $0.262264 $131.132
1000 $0.247419 $247.419
2SC4211-6-TL-E Product Details

2SC4211-6-TL-E Overview


Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.

2SC4211-6-TL-E Features


a collector emitter saturation voltage of 400mV
the emitter base voltage is kept at 6V

2SC4211-6-TL-E Applications


There are a lot of ON Semiconductor 2SC4211-6-TL-E applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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