2SC4211-6-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4211-6-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Polarity
NPN
Element Configuration
Single
Gain Bandwidth Product
200MHz
Collector Emitter Voltage (VCEO)
50V
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
55V
Emitter Base Voltage (VEBO)
6V
hFE Min
135
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.312361
$0.312361
10
$0.294680
$2.9468
100
$0.278000
$27.8
500
$0.262264
$131.132
1000
$0.247419
$247.419
2SC4211-6-TL-E Product Details
2SC4211-6-TL-E Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.
2SC4211-6-TL-E Features
a collector emitter saturation voltage of 400mV the emitter base voltage is kept at 6V
2SC4211-6-TL-E Applications
There are a lot of ON Semiconductor 2SC4211-6-TL-E applications of single BJT transistors.