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SS8550CTA

SS8550CTA

SS8550CTA

ON Semiconductor

SS8550CTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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SS8550CTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating -1.5A
Frequency 200MHz
Base Part Number SS8550
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -280mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -6V
hFE Min 85
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.048320 $0.04832
500 $0.035529 $17.7645
1000 $0.029608 $29.608
2000 $0.027163 $54.326
5000 $0.025386 $126.93
10000 $0.023615 $236.15
15000 $0.022838 $342.57
50000 $0.022457 $1122.85
SS8550CTA Product Details

SS8550CTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -280mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 80mA, 800mA.Emitter base voltages of -6V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.200MHz is present in the transition frequency.The breakdown input voltage is 25V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

SS8550CTA Features


the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz

SS8550CTA Applications


There are a lot of ON Semiconductor SS8550CTA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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