SS8550CTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -280mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 80mA, 800mA.Emitter base voltages of -6V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.200MHz is present in the transition frequency.The breakdown input voltage is 25V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
SS8550CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550CTA Applications
There are a lot of ON Semiconductor SS8550CTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
