BC558 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC558 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Current Rating
-100mA
Frequency
150MHz
Base Part Number
BC558
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
500mW
Power - Max
500mW
Gain Bandwidth Product
150MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Collector Emitter Saturation Voltage
-250mV
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.08000
$0.08
500
$0.0792
$39.6
1000
$0.0784
$78.4
1500
$0.0776
$116.4
2000
$0.0768
$153.6
2500
$0.076
$190
BC558 Product Details
BC558 Description
Because the BC558 is a PNP transistor when the base pin is held at ground, the collector and emitter will be closed (Forward biased), and when a signal is applied to the base pin, the collector and emitter will be open (Reverse biased). A PNP transistor differs from an NPN transistor in this regard.
BC558 has a gain range of 110 to 800, which determines the transistor's amplification capacity. The Collector pin can handle up to 200mA of peak current, which when combined with the high gain value makes it an excellent choice for audio amplification.
When fully biased, this transistor can allow a continuous current of 100mA to flow between the collector and emitter. The voltage allowed across the Collector-Emitter (V-CE) or Base-Emitter (VBE) could be 200 or 900 mV in this stage, which is known as the Saturation Region. The transistor gets entirely off when the base current is eliminated; this stage is known as the Cut-off Region, and the Base Emitter value may be approximately 660 mV.
BC558 Features
? Amplifier and Switching
? BC556, VCEO = -65 V, High Voltage
? BC559, BC560 are low-noise models.
? Supports BC546, BC547, BC548, BC549, and BC550.
? These products are lead-free, halogen-free, and RoHS compliant.
? Transistor with Bi-Polar PNP Amplifier
? The maximum DC Current Gain (hFE) is 800.
? 100mA is the continuous collector current (IC).
? 200mA is the maximum collector current (Ic).
? The VBE (Voltage Base Emitter) is 5V.
? The peak current (IB) is 200mA.
? To-92 Package is available.
BC558 Applications
? Make basic audio circuitry
? Amplifier for general use
? Relay drivers, LED drivers, and other driver modules.
? Audio amplifiers, signal amplifiers, and other amplifier modules.