2SD1803T-H Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Collector current can be as low as 5A volts at its maximum.
2SD1803T-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803T-H Applications
There are a lot of ON Semiconductor 2SD1803T-H applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
