2SD1803T-H Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Collector current can be as low as 5A volts at its maximum.

2SD1803T-H Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V

2SD1803T-H Applications

There are a lot of ON Semiconductor 2SD1803T-H applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver