BSV52LT1G Overview
DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 1.2V to achieve high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 400MHz.A breakdown input voltage of 12V volts can be used.Maximum collector currents can be below 100mA volts.
BSV52LT1G Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 1.2V
the current rating of this device is 200mA
a transition frequency of 400MHz
BSV52LT1G Applications
There are a lot of ON Semiconductor BSV52LT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
