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2DD2661-13

2DD2661-13

2DD2661-13

Diodes Incorporated

2DD2661-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DD2661-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2DD2661-13
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation900mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 170MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DD2661
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Power - Max 900mW
Transistor Application SWITCHING
Gain Bandwidth Product170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage12V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage180mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:14975 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.400086$0.400086
10$0.377440$3.7744
100$0.356075$35.6075
500$0.335920$167.96
1000$0.316906$316.906

2DD2661-13 Product Details

2DD2661-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 200mA 2V DC current gain.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.A VCE saturation (Max) of 180mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 170MHz.An input voltage of 12V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.

2DD2661-13 Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 170MHz

2DD2661-13 Applications


There are a lot of Diodes Incorporated 2DD2661-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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