2DD2661-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DD2661-13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
2DD2661-13
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
170MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DD2661
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
170MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
170MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.400086
$0.400086
10
$0.377440
$3.7744
100
$0.356075
$35.6075
500
$0.335920
$167.96
1000
$0.316906
$316.906
2DD2661-13 Product Details
2DD2661-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 200mA 2V DC current gain.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.A VCE saturation (Max) of 180mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 170MHz.An input voltage of 12V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.
2DD2661-13 Features
the DC current gain for this device is 270 @ 200mA 2V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 180mV @ 50mA, 1A the emitter base voltage is kept at 6V a transition frequency of 170MHz
2DD2661-13 Applications
There are a lot of Diodes Incorporated 2DD2661-13 applications of single BJT transistors.