MJD32CRLG Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.There is a transition frequency of 3MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.Maximum collector currents can be below 3A volts.

MJD32CRLG Features

the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz

MJD32CRLG Applications

There are a lot of ON Semiconductor MJD32CRLG applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting