KSD1616AGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).In this part, there is a transition frequency of 160MHz.A breakdown input voltage of 60V volts can be used.During maximum operation, collector current can be as low as 1A volts.
KSD1616AGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGTA Applications
There are a lot of ON Semiconductor KSD1616AGTA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
