MPSW06RLRAG Overview
In this device, the DC current gain is 60 @ 250mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 10mA, 250mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 50MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSW06RLRAG Features
the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW06RLRAG Applications
There are a lot of ON Semiconductor MPSW06RLRAG applications of single BJT transistors.
- Driver
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- Interface
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- Inverter
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- Muting
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